Figure 5
From: Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System
Depth profile of C and Ar components. (a) C 1 s core level spectra during sputtering with binding energy in the range of 277 eV–288 eV. (b) Depth profile of C 1 s component. (c) Depth profile of Ar 2p component.
