Figure 4
Simulation results of designed waveguide structures. Electric field component Ey of SOI waveguide (a) with a 0.5 μm × 0.22 μm cross section, (b) with a 2.5 μm × 0.22 μm cross section, (c) at sidewall with scanning waveguide widths from 0.5 to 2.5μm, and (d) with a 2.5 μm × 0.22 μm cross section of bent waveguide with radius of 50 μm. (e) The overlap between straight and bent waveguides with width ranging from 0.5 to 2.5 μm and radius ranging from 20 to 300 μm. (d) The relationship between waveguide width and dneff.
