Figure 1 | Scientific Reports

Figure 1

From: Thermally Introduced Bismuth Clustering in Ga(P,Bi) Layers under Group V Stabilised Conditions Investigated by Atomic Resolution In Situ (S)TEM

Figure 1

HAADF STEM overview image of the dedicated structure containing two 55 nm thick Ga(P1-x,Bix) layers with different fractions of Bi embedded in approximately 100 nm thick GaP barriers. Some of the brighter appearing Bi clusters can be observed on the left hand side in the very top Ga(P92.6Bi7.4) layer. Around the brighter areas a contrast variation is observable which might originates from Bi depleted tracks left from moving Bi. (marked with white arrows).

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