Figure 3 | Scientific Reports

Figure 3

From: Thermally Introduced Bismuth Clustering in Ga(P,Bi) Layers under Group V Stabilised Conditions Investigated by Atomic Resolution In Situ (S)TEM

Figure 3

Plot (a) and (c) show σrel, i.e. standard deviation of the intensity within the ternary Ga(P1-x,Bix) layer divided by the mean intensity of the surrounding GaP matrix, over the time within the Ga(P1-x,Bix) layer with 7.4% and 3.6% Bi, respectively. The temperature series were carried out at 500 °C (black squares), 550 °C (red dots) and 600 °C (blue triangles). The original as well as the color coded STEM images (b) show the formation of one big and two smaller Bi clusters within the Ga(P92.6Bi7.4) layer over time. The color-coding scale is shown on the far right hand side.

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