Figure 4
From: Deep-UV photoinduced chemical patterning at the micro- and nanoscale for directed self-assembly
XPS analysis of HTS monolayers under DUV irradiation. (a) Atomic composition following the proportions (in %) of C, O and Si. (b) C(1 s) different species proportions determined from deconvolution of the C(1 s) peak. (c) Schematic view of the proposed DUV-induced degradation mechanism: (i) schematization of the Si substrate with it native oxide thin layer; (ii) the Si wafer grafted with HTS; (iii) the partially oxidized HTS SAM layer due to DUV irradiation; and (iv) cleavage of the alkyl chains, leading finally to (v) the regeneration of a SiOH surface.
