Figure 9
From: Deep-UV photoinduced chemical patterning at the micro- and nanoscale for directed self-assembly
Directed self-assembly of block copolymer revealed by AFM phase images in resonant mode. A PS-b-PMMA solution in toluene was deposited by spin-coating to obtain a film with a thickness of approximately 35 nm. In (a), a Si wafer fully covered with HTS was used. It was slightly irradiated (2 J/cm2) to avoid dewetting of the polymer film on the HTS surface. In (b), photopatterning was conducted through a 1000 nm phase mask (15 J/cm2). In (c), deposition of the PS-PMMA thin films was performed on a Si substrate.
