Figure 5 | Scientific Reports

Figure 5

From: Quantitative characterization of high temperature oxidation using electron tomography and energy-dispersive X-ray spectroscopy

Figure 5

Interfacial shape distribution (a) and illuminated mean curvatures (b) of porous Mo3Si oxidized at 1100 °C. Interfacial normal distributions for porous Mo3Si oxidized at 1100 °C for projections along the +x (c), +y (d), and +z axes (e). The area under each IND is normalized to unity. The INDs indicate that the Mo3Si structure is isotropic.

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