Figure 5
(a) Variations in longitudinal resistance (Rxx) with temperature (300 K to 2 K) without magnetic field for DGPN, DG, and PG device structures. The inset shows the optical micrograph of the Hall-bar device geometry on SiO2/Si substrate. (b) Variations in Rxx with applied magnetic field (over ±2 tesla) in DG device under the temperature range from 2 K to 90 K. (c) Comparison of Rxx and week localization effect (Rxx near B = 0) at with applied magnetic field (over ± 2 tesla) for DGPN, DG, and PG device structures at 2 K. (d–g) AFM micrograph of the two-layered pristine graphene (d) and chemically doped two layered graphene film (e) prepared using hybrid doping method. (f,g) In-situ surface conductance mapping of the same measurement as described above (pristine graphene (d), doped graphene film (e)). 5 mV applied voltage and 49 nN applied force were kept constant during the measurements and identical color scale was employed for direct comparison.
