Figure 1
From: Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors
(Top) Optical Microscope and (bottom) related SEM images (taken at an angle of 70° respect to the sample) of InGaN samples grown under different metal fluxes, from left to right: (a) 0.39 × 1014, (b) 0.98 × 1014, (c) 1.41 × 1014, (d) 3.92 × 1014, (e) 7.83 × 1014 atoms cm−2 s−1. Black line length in all the images is 100 μm.
