Figure 4
From: Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors
(a) Schematic of crystal growth under and between the metal droplets. (b) Observed dependence of average growth rate from growth time (black dots). The dashed line represents the model predictions [Eq. (7)]. Here RC = 67 nm/h and 3γB/5 = 15 nm/h1/3. Metal flux used in the growth: F = 2.94 × 1014 atoms cm−2 s−1.
