Table 1 Metal flux (In +Ga with one to one ratio), growth time, and growth rate of samples.

From: Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors

Sample

Metal flux (1014 atoms cm−2 s−1)

Growth time (mins)

Metal dose (1016 atoms cm−2)

Growth rate (nm/min)

A

0.39

120

28

0.65

B

0.78

120

56

1.20

C

0.98

120

71

1.67

D

1.17

120

84

1.46

E

1.41

90

76

1.30

F

1.96

45

53

1.37

G

2.94

45

79

1.32

H

2.94

90

158

1.42

I

2.94

150

264

1.67

J

3.92

60

141

1.03

K

7.83

90

423

0.83

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