Figure 6 | Scientific Reports

Figure 6

From: Highly-stable write-once-read-many-times switching behaviors of 1D–1R memristive devices based on graphene quantum dot nanocomposites

Figure 6

Schematic diagrams of the electronic structures corresponding to the operating mechanisms of the forward bias for the (a) Al/PMSSQ:GQDs/Al devices and the (b) Al/PMSSQ:GQDs/Al/p-Si/Al device and circuit diagrams (left insets) and reverse bias processes for the (c) Al/PMSSQ:GQDs/Al devices and the (d) Al/PMSSQ:GQDs/Al/p-Si/Al and circuit diagrams (left insets). The Ohmic contact is made with a silicon-aluminum alloy that forms in the middle of the Al/Si interface on the right in the figure, not with the p-Si; thus, the Fermi level will be as indicated in the figure. The Schottky contact is formed at the bottom of the Al/Si interface on the left in the figure.

Back to article page