Figure 2
From: Thermal Stability of Hole-Selective Tungsten Oxide: In Situ Transmission Electron Microscopy Study

Cross-sectional HRTEM micrograph of c-Si/WOx/Al structure obtained by in situ TEM studies (a) as-deposited, (b) 200 °C, (c) 400 °C, (d) 500 °C, (e) 600 °C, (f) 650 °C, (g) 700 °C.