Table 1 Composition of the powders in the porous preforms used in IG and MPIG processes.

From: High Trapped Fields in C-doped MgB2 Bulk Superconductors Fabricated by Infiltration and Growth Process

Nomenclature

IG

B (%)

SiC (%)

B4C (%)

Undoped

100

—

0

10% (B4C)

90

—

10

10% (SiC)

90

10

—

20% (B4C)

80

—

20

60% (B4C)

40

—

60

100% (B4C)

0

—

100

 

MPIG

B (%)

MgB 2 (%)

B4C (%)

Undoped MPIG

70

30

0

5% B4C (MPIG)

65

30

5

10% B4C (MPIG)

60

30

10

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