Figure 2
From: Minority and Majority Charge Carrier Mobility in Cu2ZnSnSe4 revealed by Terahertz Spectroscopy
Sum of electron and hole mobility µe+h derived from TRTS spectra. µe+h at THz frequencies f on a Cu2ZnSnSe4 thin film for different injected peak carrier concentrations. The Drude-Smith model derives a DC-value of 109–135 cm2/Vs.
