Figure 6
From: Minority and Majority Charge Carrier Mobility in Cu2ZnSnSe4 revealed by Terahertz Spectroscopy
Combining TRTS spectra and transients in high injection. Injection dependence of the ambipolar diffusion coefficient Dam given by equation (6) and its limits equations (7 and 8) in low/high injection. Dam derived from TRTS transients (red square) and the mobility sum derived from the TRTS spectrum can be combined with equation (8) to yield the mobility for electrons µe and holes µh. Horizontal bars correspond to the decay of the peak carrier concentration within the 1.8 ns TRTS transients and visualize the large uncertainty of the diffusion coefficients derived in the injection-dependent regime.
