Figure 3
Modeling of the voltage-induced TMC. DC voltage dependence of (a) the resistance RP(AP) in the P(AP) configuration. The calculation of RP(AP) is performed using Zhang’s theory. (b) Schematic of the electric potential profile of MTJs under DC voltage. The QBA is used to calculate the effective barrier thickness, which contributes to the measured capacitance. DC voltage dependence of (c) the capacitance CP in the P configuration. The CP is calculated using DF model under the QBA, described by Eq. (3). (d) Schematic of charge accumulation, contributing to \({C}_{{\rm{AP}}}^{{\rm{DF}}-{\rm{QBA}}}(f{,}\,{{V}}_{{\rm{DC}}})\) and \({C}_{{\rm{AP}}}^{{\rm{SDD}}}(f{,}\,{{V}}_{{\rm{DC}}})\), and the equivalent circuit in the AP configuration. \({C}_{{\rm{AP}}}^{{\rm{DF}}-{\rm{QBA}}}(f{,}\,{{V}}_{{\rm{DC}}})\) is described by the DF model combined with QBA under the DC voltage VDC at the frequency f [Eq. (6)]. \({C}_{{\rm{AP}}}^{{\rm{SDD}}}(f{,}\,{{V}}_{{\rm{DC}}})\) is obtained from the SDD model [Eq. (4)]. The equivalent circuit of the MTJ is modeled by the RC parallel network, consisting of the resistance RAP(VDC) and capacitance CAP(f, VDC). DC voltage dependence of (e) the capacitance CAP in the AP configuration.
