Figure 2
From: Improving carrier mobility of polycrystalline Ge by Sn doping
Grain size of SPC-Ge1−xSnx layers. (a–h) EBSD images organized as a matrix composed of Td (50 and 125 °C) rows and x (0, 1.6, 3.2, and 4.5%) columns. Average grain size determined by EBSD for (i) Ge and Ge0.97Sn0.03 samples as a function of Td and for (j) Ge1−xSnx samples for Td = 50 and 125 °C as a function of x. Here, Tg = 450 °C.
