Table 2 Simulated device performances of the single p/i/n-TFS top sub-cell having different band gap profile active i-layers.

From: High Efficiency Inorganic/Inorganic Amorphous Silicon/Heterojunction Silicon Tandem Solar Cells

Devices

Voc [V]

Jsc [mA/cm2]

FF (%)

PCE [%]

p/a-SiGe:H(i)/n-TFS

930

15.3

69.97

9.94

p/graded f-p band-gap a-SiGe:H(i)/n-TFS

897

17.0

64.38

9.81

p/graded r-p band-gap a-SiGe:H(i)/n-TFS

965

13.1

69.43

8.75

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