Figure 2
(a,e) Temperature-dependent negative magnetoresistance ratio for 20-nm-thick samples with x = 0.76 and 0.58 caused by spin dependent scattering of carriers. (b,f) Hall resistance Rxy in samples with x = 0.76 and 0.58 showing hysteretic behaviour, corresponding to the anomalous Hall effect at different temperatures from 1.8 K to 180 K. (c,g) Temperature dependent Kerr angle θK as a function of field for x = 0.76 and 0.58. (d,h) Magnetic hysteresis loops comparing the anomalous Hall resistance Rxy and Kerr angle θK as a function of magnetic field in a film with x = 0.76 and x = 0.58 at 10 K and 50 K. Both measurements are in good agreement with each other.
