Figure 4 | Scientific Reports

Figure 4

From: Systematic Study of Ferromagnetism in CrxSb2−xTe3 Topological Insulator Thin Films using Electrical and Optical Techniques

Figure 4

(a) Gate bias dependence of the Hall traces Rxy in a sample with x = 0.58 at 1.8 K showing an increase in the AHE from −3 V to +3 V. Top inset: Rxx vs Vg curve at 200 K. Lower inset: T dependence of the anomalous Hall conductivity \(\,{\sigma }_{xy}^{A}\) for Vg = −3 V, 0 V and +3 V. (b) Hall resistance Rxy at 1.8 K for various Cr doping x.

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