Table 1 Summary of the physical parameters of the Cr-doped Sb2Te3 thin films as determined by different methods. The Cr atomic concentration was measured and calculated using XPS, 2D carrier density (p), and mobility obtained from electrical transport and THz-TDS. Tc was deduced from electric transport.

From: Systematic Study of Ferromagnetism in CrxSb2−xTe3 Topological Insulator Thin Films using Electrical and Optical Techniques

Sample

p transport (1013 cm−2)

p Thz (1013 cm−2)

µ transport (cm2/Vs)

µ Thz (cm2/Vs)

Tc (K)

Cr0.15Sb1.85Te3

5.83

2.33

207

340

35

Cr0.41Sb1.59Te3

8.24

3.52

107

243

74

Cr0.58Sb1.42Te3

9.28

5.81

70

165

132

Cr0.76Sb1.24Te3

11.52

12.20

28

161

176

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