Figure 3
From: Si and Ge based metallic core/shell nanowires for nano-electronic device applications
Electronic band structures of (a) As/Ge (2 R) (b) As/Si (2 R) (c) Sb/Ge (2 R) and (d) Sb/Si (2 R) core/shell nanowires. The corresponding transmission spectrum as a function of energy (eV) under zero bias voltage of each NW is shown on the right side.
