Figure 2
From: A study on mechanism of resistance distribution characteristics of oxide-based resistive memory
(a) Experimentally measured multi-level resistance switching results with the OxRAM of L = 3 nm. Different off-state resistances are created by applying different reset pulses (3.5, 4.5, 5.5 V) and repeated 100 cycles. The set/reset pulses are all 500 ns of duration time and the read is performed by applying 0.5 V pulse between each programming. (b) log-scale on/off ratio as a function of Vreset along with the linearly fitted line (red).
