Figure 4

Results from the OxRAM switching model for different filament lengths (L = 2.5, 3, and 3.5 nm) with the experimental switching layer thickness conditions described in Fig. 1(b). Here, Φ_B00 = 0.28 eV, the resistance of filament at off-state = 10⁵ Ω, the resistance of base layer = 2 × 10⁴ Ω, and μ_O for insulating volume and conducting volume are 3 × 10⁻¹¹ and 3 × 10⁻⁹ m²s⁻¹V⁻¹ respectively.