Figure 3
(a) Histograms of the height distributions of each AFM image at 500 nm FOV. (b) RMS roughness of a silicon surface before the ALD process vs. a hafnium oxide surface for five measurements. The first linear fit data (slope 0.13, intercept 0.14 nm) was extracted from the four lowest data values. The second fit data (slope 1.24, intercept −0.16 nm) was extracted from three highest data values. (c) Current at 2 V from the MIM diode structure with different RMS roughness of the Si substrate.
