Figure 2
From: A cryogenic spin-torque memory element with precessional magnetization dynamics
Comparison of T = 4 K experimental (a,b) and T = 60 simulated (c,d) switching phase diagrams for (a,c) P → AP and (b,d) AP → P switching polarities. Each pixel represents an estimate of the switching probability from on average 2048 attempts. All data is taken with positive current polarity, which we define as having electron flow from the reference layer to the free layer.
