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Figure 1

From: Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium

Figure 1

(a) Film stack for field-free magnetization switching, with unit in nanometers. (b) In-plane hysteresis loop of a pure SAF structure with the film stack of substrate/Ta/Co(2 nm)/Ru(0.85 nm)/Co(2 nm)/Ta. (c) Schematic illustration of the Hall-bar device for spin-orbit torque measurement. (d) Perpendicular-field-driven anomalous Hall effect loop for the device with the film stack shown in (a).

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