Figure 3
From: Spin-momentum locked spin manipulation in a two-dimensional Rashba system
Quantized conductance and out-of-plane magnetic field dependence in a single QPC. (a) Conductance G (in unit of 2e2/h) as a function of side gate bias voltage VSG with different dc source–drain bias voltage Vsd (0.1 mV step from 0 mV to 9 mV) at Bop = 0 T and T = 0.22 K. The top gate bias voltage is fixed at VTG = +0.3 V; the corresponding Rashba SO coefficient α is 3.74 × 10−12 eVm. Thick red lines correspond to each 1 mV step from 0 mV (far left) to 9 mV (far right). (b) Quantized conductance with different out-of-plane Bop field from 0 to 4.5 T with 0.5 T step. T = 0.22 K and VTG = +0.3 V.
