Table 1 FET parameters of a [10]phenacene thin-film FET with an SiO2 gate dielectric.

From: Synthesis of the extended phenacene molecules, [10]phenacene and [11]phenacene, and their performance in a field-effect transistor

sample

μ (cm2V−1s−1)

|Vth| (V)

ON/OFF

S (V/decade)

L (μm)

W (μm)

#1

3.70 × 10−2

39.0

3.5 × 105

6.5

50

500

#2

3.54 × 10−2

41.2

7.3 × 105

4.7

50

500

#3

3.64 × 10−2

38.6

1.4 × 105

5.9

100

500

#4

2.40 × 10−2

40.3

2.5 × 105

2.8

450

1000

#5

2.39 × 10−2

40.9

2.1 × 105

4.8

50

500

average

3.1(7) × 10−2

40(1)

3(2) × 105

5(1)

—

—

  1. The parameters were determined from the forward transfer curves.
Back to article page