Table 2 FET parameters of an [11]phenacene thin-film FET with an SiO2 gate dielectric.

From: Synthesis of the extended phenacene molecules, [10]phenacene and [11]phenacene, and their performance in a field-effect transistor

sample

μ (cm2V−1s−1)

|Vth| (V)

ON/OFF

S (V/decade)

L (μm)

W (μm)

#1

1.182 × 10−1

42.9

3.8 × 105

5.5

50

500

#2

1.086 × 10−1

42.7

6.1 × 104

6.1

100

500

#3

1.106 × 10−1

47.0

3.4 × 105

3.8

150

500

#4

1.072 × 10−1

49.8

2.8 × 105

5.7

200

500

#5

1.093 × 10−1

58.8

7.3 × 105

3.5

135

500

average

1.11(4) × 10−1

48(7)

4(2) × 105

5(1)

—

—

  1. The parameters were determined from the forward transfer curves.
Back to article page