Figure 5
From: Effect of encapsulation on electronic transport properties of nanoscale Cu(111) films
Electronic band structure along the high-symmetry lines in the Brillouin zone for t = 4 nm Cu film (a) bare (b) Gr (c) HGr (d) Graphane (e) Co (f) Mo (g) Ta and (h) Ru encapsulations. The horizontal dashed line indicates Fermi energy (=0 eV).
