Figure 6
From: Effect of encapsulation on electronic transport properties of nanoscale Cu(111) films
Projected density of states for Cu thin film of thickness t = 4 nm when encapsulated with (a) 2D materials and (b) transition metals (Gaussian broadening = 0.10 eV). The contribution near Ef (=0 eV) is shown in the insets. (c) Bader analysis of Cu thin film when encapsulated with Gr, HGr, Co, Mo, Ta, and Ru to show charge transfer between encapsulation and surface Cu atoms. The excess charge is indicated by negative (−) sign and charge depletion is indicated by positive (+) sign.
