Figure 5
Dark I-V characteristics of the fabricated TiN-Si junction for different TiN contact areas - diameter d = 100 μm and d = 200 μm for (a) n-doped and (b) p-doped Si respectively.
Figure 5 | Scientific Reports
Dark I-V characteristics of the fabricated TiN-Si junction for different TiN contact areas - diameter d = 100 μm and d = 200 μm for (a) n-doped and (b) p-doped Si respectively.
