Table 1 Properties of common metals used in the Schottky barrier photodetectors.

From: Plasmonic Schottky photodetector with metal stripe embedded into semiconductor and with a CMOS-compatible titanium nitride

 

Au

Ag

Al

Cu

Ti

TiN

ΦBn[eV]

0.79–0.82

0.59–0.62

0.6–0.69

0.54–0.57

0.5

0.45

ΦBp[eV]

0.32

0.43–0.46

0.42

0.37–0.4

0.61

0.7

Work function [eV]

5.1

4.2

4.1

4.6

4.33

4

Fermi energy level [eV]

5.51

5.48

11.63

7

—

4.2–4.3

Carrier free mean path [nm]

38

53

19

40

—

45–50

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