Figure 1
Schematics and energy band diagram of the ohmic and Schottky contacts in AOS-based Schottky diodes. (a) A degradation of the Schottky barrier height caused by intrinsic structural relaxation driven doping of the AOS at the Schottky contact. (b) Moreover, an excessive interfacial reaction at the ohmic contact can affect the bulk oxide region. The thermal stability of devices can be improved by (c) introducing a metal alloy electrode and (d) enriching the Ga concentration at the Schottky interface. (e) Schematic structure, cross-sectional TEM image of the Schottky diode and following (f) the EDS composition profile of devices before and after annealing at 300 °C for 1 h. The corresponding position was marked in a red line at (e). After the post-annealing process, the segregation of Mn in CuMn was observed, and high Ga concentration in the vicinity of the Schottky interface was well maintained.
