Figure 1
From: Short-period scattering-assisted terahertz quantum cascade lasers operating at high temperatures
Conduction band diagram and tight-binding states of SAI two-well THz-QCLs with three neighboring periods n − 1, n, n + 1. (a) design-1 (Al0.3Ga0.7As/GaAs, barriers/wells: 2.7/17.4/1.25/11.8 nm) and (b) design-2(Al0.3Ga0.7As/Al0.04Ga0.96As (GaAs), barriers/wells: 3.2/17.9/2/5.3 nm). The underlined layer is doped by silicon at a sheet doping level of 3.9 × 1010 cm−2. Photon emission energy is 15 meV. Oscillator strength between laser states (ULL/LLL) is ~0.28.
