Figure 4
From: Room temperature Co-doped manganite/graphene sensor operating at high pulsed magnetic fields
The magnetoresistance dependence on magnetic flux density at pulsed magnetic field up to 21 T of single- and three-layer graphene at 300 K. The inset: The magnetoresistance dependence on magnetic flux density up to 0.5 T for single- and three-layer graphene.
