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Figure 1

From: A New Analytic Formula for Minority Carrier Decay Length Extraction from Scanning Photocurrent Profiles in Ohmic-Contact Nanowire Devices

Figure 1

(a) Schematic of a typical SPCM setup. (b,c) Calculated spatial distribution of photo-induced (b) hole concentration and (c) electron concentration for n-type InAs nanowires with bias voltage Vb of 1 V (corresponding to an applied electric field of 2000 V/cm) under excitation at position of 2 μm. (d) Calculated scanning photocurrent profiles. Results from numerical simulation are also shown for comparison.

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