Figure 2
Effectiveness of the analytical model for n-type InAs nanowires. (a) Scanning photocurrent profiles with varied applied electric field. (b) Fitted decay length as a function of applied electric field, (c) Scanning photocurrent profiles with varied pumping density. (d) Fitted decay length as a function of pumping density. (e) The relations between the fitted decay length and the calculated decay length with varied excitation spot size. (f) The relative error of the fitted decay length as a function of calculated decay length with varied excitation spot size. (g) Fitted decay length as a function of the calculated decay length with varied Lch. The applied electric field is 20 V/cm, and the calculated decay length is varied by changing the hole mobility. The corresponding diffusion length is also shown as top x axis. The applied electric field for simulation in (c,d) is set to be 500 V/cm. The dashed lines in (b,d) indicate the calculated decay lengths using Eq. (3). The x = y line is shown in (e,g) as the dashed line for clarity. The photocurrent profiles in (a,c) are offset vertically for clarity.
