Figure 2

Box plot of the recombination current density parameter J0.PEDOT of the PEDOT:PSS/c-Si interface as a function of the sorbitol content of the PEDOT:PSS precursor dispersion. PEDOT:PSS was applied to 9 test samples for each sorbitol concentration. The J0.SiN value of 16 fA/cm2 of the SiNx-passivated silicon surface was subtracted from the measured J0 value to account only for recombination at the PEDOT:PSS/c-Si interface.