Table 1 Thin films identification, rf sputtering power used on individual cathodes, and chemical composition of the fabricated Ga-Sb-Se thin films determined using EDS analysis (±1 at. %).
From: Mass spectrometric investigation of amorphous Ga-Sb-Se thin films
Sample name | rf power (W) | Chemical composition (at. %) | |||
|---|---|---|---|---|---|
Ga2Se3 | Sb2Se3 | Ga | Sb | Se | |
A | 25 | 5 | 31.7 | 5.2 | 63.1 |
B | 20 | 5 | 30.3 | 6.9 | 62.8 |
C | 20 | 8 | 19.2 | 17.5 | 63.3 |
D | 20 | 10 | 16.7 | 21.7 | 61.6 |
E | 20 | 12 | 13.6 | 24.7 | 61.7 |
F | 20 | 15 | 10.9 | 27.6 | 61.5 |
G | 15 | 15 | 7.6 | 31.2 | 61.2 |
