Figure 2
Transmission electron microscopy (TEM) observations following thermal oxidation of poly-SiGe spacer islands nano-patterned over Si3N4 layers deposited over poly-Si ridges. (a) STEM micrograph, (b) EDX maps of elemental Ge, N, Si, and O of the paired Ge QDs, each with diameter of 12 nm, formed at each sidewall of the poly-Si ridges.
