Figure 4 | Scientific Reports

Figure 4

From: Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe

Figure 4

Cross-sectional SEM and TEM micrographs of 12 nm Ge DQDs formed by thermal oxidation at 900 °C for 10.5 min. The width of poly-Si ridges is decreased from (a) 75 nm, (b) 50 nm, and to (c) 25 nm, and the inter-dot spacing correspondingly decreases from (d) 110 nm, to (e) 85 nm, and to (f) 60 nm.

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