Figure 5
Cross-sectional SEM and TEM micrographs of larger, 20 nm Ge DQDs formed by thermal oxidation at 900 °C for 10.5 min. A decrease in the width of poly-Si ridges from (a) 75 nm to (b) 25 nm reduces the inter-dot spacing from (d) 105 nm to (e) 55 nm.
