Figure 8
Cross-sectional TEM micrograph of symmetrical Ge DQDs with diameters as small as 12 nm and spacing between QDs as close as 13 nm formed by thermal oxidation at 900 °C for 27 min.
Figure 8 | Scientific Reports
Cross-sectional TEM micrograph of symmetrical Ge DQDs with diameters as small as 12 nm and spacing between QDs as close as 13 nm formed by thermal oxidation at 900 °C for 27 min.
