Figure 2 | Scientific Reports

Figure 2

From: Interplay of strain and intermixing effects on direct-bandgap optical transition in strained Ge-on-Si under thermal annealing

Figure 2

Comparison of structural and compositional change at the Si-Ge interface in terms of the presence of post-growth thermal annealing. (a) STEM and HRTEM (inset) image of the As-grown Ge-on-Si. Composition of Ge and Si atom measured by EDS mapping for the same region is shown on the right side of the STEM image. (b) After thermal annealing at 800 °C for 10 minutes.

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