Figure 2 | Scientific Reports

Figure 2

From: Enhancing the photovoltaic performance of hybrid heterojunction solar cells by passivation of silicon surface via a simple 1-min annealing process

Figure 2

The spectroscopic ellipsometry analysis of the oxide layer on Si surface formed by annealing (a) at 500 °C for 0–10 min and (b) at 400–800 °C for 1 min. “w/o Passivation” represents the n-Si substrates after etching in HF, “native oxide” represents the n-Si substrates kept in air for 10 days after HF-treatment, and “w/ Passivation” represents the n-Si substrates with passivation by annealing after the HF-treatment. Three samples were prepared for each condition and three points were measured for each sample. Error bars show the standard deviation.

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