Figure 2
From: Spatial Surface Charge Engineering for Electrochemical Electrodes
Open circuit potential as function of InGaN layer thickness. OCP as a function of time for the InN/InGaN electrode and Ag/AgCl reference electrode immersed alternately for 150 seconds in 0.1 and 1 M KCl aqueous solutions. The insets show the top-view- (left-hand side) and cross-sectional (right-hand side) SEM images. The In0.45Ga0.55N layer thicknesses are (A) 35, (B) 95, (C) 130 and (D) 190 nm. The InN deposition amount is 0.8 ML for all samples.
