Figure 4 | Scientific Reports

Figure 4

From: Ultraviolet and Infrared luminescent Au-rich nanostructure growth in SiO2 by burrowing and inverse Oswald ripening process

Figure 4

Evolution of the maximum energy per atom, Eamax,for different radial distances from the ion path in Au(6 nm)/Si(6 nm)/SiO2(substrate) target under 500 keV Xe ion irradiation. The horizontal dashed dot lines indicate the melting energy per atom Eam(Au), Eam(Si) and Eam(SiO2) for Au, Si and SiO2, respectively. The vertical dashed dot lines show theAu/Si and Si/SiO2 interfaces. The schematic at the bottom of the figure shows the multilayer structure as well as the cylindrical symmetry of the energy deposition of an incident ion on both electronic and atomic subsystems. The energy per atom (or lattice temperature) is the highest at the impact position and gradually decreases with radial distance, as illustrated with the red colour nuance.

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